Led carrier and manufacturing method thereof

ABSTRACT

An LED carrier includes a substrate, a metallic layer, an insulating layer, and a reflecting layer. The metallic layer is disposed on the substrate and has a die bonding region and a ring-shaped wiring region separated from the die bonding region. A region arranged between the die bonding region and the ring-shaped wiring region is defined as an insulating region. The insulating layer at least partially covers the insulating region. The reflecting layer is arranged above the die bonding region and at least partially covers the top surface of the insulating layer. Moreover, the instant disclosure also provides a manufacturing method of an LED carrier.

BACKGROUND OF THE DISCLOSURE

1. Field of the Disclosure

The instant disclosure relates to a carrier; in particular, to an LEDcarrier and a manufacturing method thereof.

2. Description of Related Art

The conventional LED carrier usually includes a substrate, a dielectriclayer, and a metallic layer. The dielectric layer is disposed on thesubstrate, and the metallic layer is disposed on the dielectric layer.Due to the side wall of the metallic layer is always exposed to air,such that the exposed side wall of the metallic layer is easilyoxidized. Furthermore, the chemical etching is usually used in themanufacturing process for forming the metallic layer, and the etchingagent is easily resided thereinside. It leads to degradation of lightoutput for the LED package structure.

To achieve the abovementioned improvement, the inventors strive throughindustrial experience and academic research to present the instantdisclosure, which can provide additional improvement as mentioned above.

SUMMARY OF THE DISCLOSURE

One embodiment of the instant disclosure provides an LED carrier and amanufacturing method thereof for effectively solving the problem thatthe side wall of the metallic layer is exposed to the air.

The LED carrier and the manufacturing method thereof according to theinstant disclosure are provided with the insulating layer arranged inthe insulating region, such that the side wall of the metallic layer isnot exposed to the air. That is to say, with the insulating layerentirely covering the side walls of the die bonding region and thering-shaped region, the side wall of the die bonding region is notexposed. The degradation of light output can be avoided due to the sidewall of the die bonding region is not oxidized and the etching agent isnot resided thereinside.

In order to further appreciate the characteristics and technicalcontents of the instant disclosure, references are hereunder made to thedetailed descriptions and appended drawings in connection with theinstant disclosure. However, the appended drawings are merely shown forexemplary purposes, rather than being used to restrict the scope of theinstant disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a perspective view showing an LED package structure accordingto a first embodiment of the instant disclosure;

FIG. 1B is a top view of FIG. 1A as an encapsulation body is omitted;

FIG. 2A is an exploded view of FIG. 1A;

FIG. 2B is a top view showing the LED carrier of FIG. 2A as asolder-resist layer is omitted;

FIG. 3 is an exploded view showing the LED carrier of FIG. 2A;

FIG. 4A is a cross-sectional view of FIG. 1A along line 4A-4A;

FIG. 4B is an enlarged view showing the region 4B of FIG. 4A;

FIG. 5A is a cross-sectional view showing the step S110 of the firstembodiment of the instant disclosure;

FIG. 5B is a cross-sectional view showing the step S130 of the firstembodiment of the instant disclosure;

FIG. 5C is a cross-sectional view showing the step S150 of the firstembodiment of the instant disclosure;

FIG. 6 is a cross-sectional view showing an alternative state of thefirst embodiment of the instant disclosure;

FIG. 7 is a cross-sectional view showing another alternative state ofthe first embodiment of the instant disclosure;

FIG. 8 is a perspective view showing the LED package structure accordingto a second embodiment of the instant disclosure;

FIG. 9 is an exploded view of FIG. 8;

FIG. 10 is an exploded view showing the LED carrier of FIG. 9;

FIG. 11A is a cross-sectional view of FIG. 8 along line 11A-11A;

FIG. 11B is an enlarged view showing the region 11B of FIG. 11A;

FIG. 12A is a perspective view showing the LED package structureaccording to a third embodiment of the instant disclosure;

FIG. 12B is a perspective view showing the LED carrier of FIG. 12A;

FIG. 13A is a perspective view showing an alternative state of the thirdembodiment of the instant disclosure;

FIG. 13B is a perspective view showing the LED carrier of FIG. 13A;

FIG. 14 is a perspective view showing the LED package structureaccording to a fourth embodiment of the instant disclosure;

FIG. 15 is an exploded view of FIG. 14;

FIG. 16 is an exploded view showing the LED carrier of FIG. 15;

FIG. 17A is a cross-sectional view of FIG. 14 along line 17A-17A;

FIG. 17B is an enlarged view showing the region 17B of FIG. 17A; and

FIG. 18 is a perspective view showing the LED package structureaccording to a fifth embodiment of the instant disclosure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

Please refer to FIGS. 1A through 7, which show a first embodiment of theinstant disclosure. References are hereunder made to the detaileddescriptions and appended drawings in connection with the instantdisclosure. However, the appended drawings are merely shown forexemplary purposes, rather than being used to restrict the scope of theinstant disclosure.

Please refer to FIG. 2A. The instant embodiment provides an LED packagestructure including an LED carrier 100, a plurality of LED dies 200mounted on the LED carrier 100, a reflecting frame 300, and anencapsulation body 400. The encapsulation body 400 may have fluorescentpowders mixed therein, but is not limited thereto. The followingdescription discloses the detailed structure of the LED carrier 100, andthen discloses the relationship between the LED carrier 100 and theother components.

Please refer to FIGS. 2A and 3. The LED carrier 100 provided by theinstant embodiment includes a substrate 1, a metallic layer 3, aninsulating layer 4, a solder-resist layer 6, and a reflecting layer 5.The metallic layer 3, the insulating layer 4, the solder-resist layer 6,and the reflecting layer 5 are substantially disposed on the substrate 1in sequence. Moreover, the substrate 1 may be a metallic substrate or aninsulating substrate. When the substrate 1 is the metallic substrate, adielectric layer (not shown) is disposed between the metallic substrateand the metallic layer 3, the dielectric layer covers one surface of themetallic substrate, and the edge of the dielectric layer issubstantially aligned with the edge of the metallic substrate. Themetallic substrate can be an aluminum substrate or a copper substrate,but is not limited thereto. The insulating substrate can be a ceramicsubstrate or a resin substrate.

The metallic layer 3 (e.g., copper foil) is disposed on the substrate 1and has a first pattern. The first pattern includes a die bonding region31 and a ring-shaped wiring region 32 separated from the die bondingregion 31. The die bonding region 31 has a circle-shaped main portion311 with large scale arranged on the center of the substrate 1, acircle-shaped temperature sensing portion 314 with relatively smallerscale when compared to the circle-shaped main portion 311, and anextending portion 315 connecting the main portion 311 to the temperaturesensing portion 314. The ring-shaped wiring region 32 surrounds the mainportion 311 of the die bonding region 31 to substantially resemble aring shape. The ring-shaped wiring region 32 can be defined as twoportions 32P, 32N, such as a positive electrode circuit 32P and anegative electrode circuit 32N. Moreover, the main portion 311 isarranged inside the two portions 32P, 32N of the ring-shaped wiringregion 32, the extending portion 315 passes through one adjacent side ofthe two portions 32P, 32N of the ring-shaped wiring region 32, and thetemperature sensing portion 314 is arranged outside the two portions32P, 32N of the ring-shaped wiring region 32. The two portions 32P, 32Nof the ring-shaped wiring region 32 each has a soldering pad 324, andthe two soldering pads 324 are correspondingly arranged at two opposingcorners of the substrate 1.

Specifically, each of the two portions 32P, 32N of the ring-shapedwiring region 32 has two arc slots 321, and the four arc slots 321 ofthe ring-shaped wiring region 32 (i.e., the first slot 321 a, the secondslot 321 b, the third slot 321 c, and the fourth slot 321 d)substantially surround the main portion 311 of the die bonding region 31so as to substantially resemble an arc-shaped slot. Each of the arcslots 321 has a V-shaped notch 3211. That is to say, the first slot 321a, the second slot 321 b, the third slot 321 c, and the fourth slot 321d respectively have a first V-shaped notch 3211 a, a second V-shapednotch 3211 b, a third V-shaped notch 3211 c, and a fourth V-shaped notch3211 d. An opening of the V-shaped notch 3211 of each arc slot 321 facesaway from the main portion 311 of the die bonding region 31 and has aright angle of about ninety degrees. The arc slots 321 of thering-shaped wiring region 32 are substantially respectively arranged atfour quadrants, a pair of the V-shaped notches 3211 (i.e., the twoV-shaped notches 3211 a and 3211 c as shown in FIG. 2B) are disposed ina symmetry manner by passing through a circle center of the main portion311, and another pair of the V-shaped notches 3211 (i.e., the twoV-shaped notches 3211 b and 3211 d as shown in FIG. 2B) are alsodisposed in a symmetry manner by passing through the circle center ofthe main portion 311, thereby providing a plurality of position marksfor disposing LED dies 200. However, the arc slots 321 of thering-shaped wiring region 32 are not limited to the above conditions.For example, the number of the arc slot 321 of each portion of thering-shaped wiring region 32 is one, and the two slots 321 of thering-shaped wiring region 32 are disposed in a symmetry manner bypassing through the circle center of the main portion 311.

The insulating layer 4 has a second pattern. The insulating layer 4 isdisposed on a portion of the substrate 1 not covered by the metalliclayer 3, and the second pattern of the insulating layer 4 iscomplementary to the first pattern of the metallic layer 3. Moreover, atop surface of the metallic layer 3 and a top surface of the insulatinglayer 4 are coplanar, and the edge of the insulating layer 4 issubstantially aligned with the edge of the substrate 1. The material ofthe insulating layer 4 is preferably a solder-resist ink, silicone,ceramic ink, or thermosetting resin, but is not limited thereto.

Please refer to FIG. 2A. The solder-resist layer 6 is substantiallydisposed on the insulating layer 4, and a covering region of theinsulating layer 4 covered by the solder-resist layer 6 is slightlysmaller than the top surface of the insulating layer 4, that is to say,the covering region of the insulating layer 4 covered by thesolder-resist layer 6 is arranged inside the outer edge of theinsulating layer 4 by a distance. The solder-resist layer 6 has acircular opening 61 substantially surrounding the outer edges of theslots 321, and the slots 321 are in air communication with the opening61. The circular opening 61 provides a circular region for mounting theLED dies 200 thereon. The opening of the V-shaped notch 3211 of eachslot 321 faces the solder-resist layer 6 to facilitate the locations ofthe LED dies 200.

Moreover, the solder-resist layer 6 further has a circular opening 62and two triangular openings 63 arranged outside the opening 61. Theposition of the opening 62 substantially corresponds to that of thetemperature sensing portion 314, such that the temperature sensingportion 314 is exposed from the solder-resist layer 6 via the opening 62to facilitate sensing temperature of the die bonding region 31 that theat least one LED die 200 is mounted thereon. The positions of the twoopenings 63 respectively and substantially correspond to the twosoldering pads 324, so that the two soldering pads 324 are exposed fromthe solder-resist layer 6 via the openings 63 in order to connect to anexternal power.

The reflecting layer 5 is disposed on the top surface of the mainportion 311 of the die bonding region 31 and is extended to cover partof the top surface of the insulating layer 4 (as shown in FIGS. 2B and4A). A light reflectivity of the reflecting layer 5 for the light havinga wavelength of 400˜470 nm is at least 80%. The material of thereflecting layer 5 can be selected from the group consisting ofsolder-resist ink, silicone, and ceramic ink. The material of theinsulating layer 4 can be selected from the group consisting ofsolder-resist ink, silicone, ceramic ink, and thermosetting resin. Inother words, the material of the reflecting layer 5 can be identical toor different from the material of the insulating layer 4. For example,when the materials of the reflecting layer 5 and the insulating layer 4are ceramic ink, the light reflectivity of the LED carrier 100 for thelight having a wavelength of 400˜470 nm is almost 97%; or, when thematerial of the reflecting layer 5 is ceramic ink and the material ofthe insulating layer 4 is silicone, the light reflectivity of the LEDcarrier 100 for the light having a wavelength of 400˜470 nm is alsoabout 97%. However, the material of the reflecting layer 5 or theinsulating layer 4 is not limited to the instant embodiment. Thus, thelight generated from the LED dies 200 disposed on the reflecting layer 5can be effectively reflected by choosing the material of the reflectinglayer 5, thereby increasing the light emitting performance of the LEDpackage structure.

The above description is the schematic description of the LED carrier100 of the instant embodiment. Please refer to FIGS. 4A and 4B. Thefollowing description further discloses the detail relationships of thesubstrate 1, the metallic layer 3, a portion of the insulating layer 4arranged between the die bonding region 31 and the ring-shaped wiringregion 32, and the reflecting layer 5. The LED carrier 100 issubstantially symmetrical to the center thereof, the followingdescription only refers to FIG. 4A in order to introduce theconstruction of one side of the LED package structure in FIG. 1A.Moreover, the die bonding region 31 disclosed in the description of theFIGS. 4A and 4B is the main portion 311.

Each of the die bonding region 31 and the ring-shaped wiring region 32has a top surface 312, 322 faced away from the top surface of thesubstrate 1 and a side wall 313, 323 respectively arranged between thetop surface 312, 322 and the top surface of the substrate 1. A regionarranged between the side wall 313 of the die bonding region 31 and theside wall 323 of the ring-shaped wiring region 32 is defined as aninsulating region 2 (as shown in FIG. 5A). The insulating layer 4 isfilled in the insulating region 2 that is arranged between the side wall313 of the die bonding region 31 and the side wall 323 of thering-shaped wiring region 32, and the insulating layer 4 has a topsurface 41 faced away from the substrate 1. Specifically, the topsurface 41 of the insulating layer 4, the top surface 312 of the diebonding region 31, and the top surface 322 of the ring-shaped wiringregion 32 are substantially coplanar. An arithmetical mean roughness(Ra) of the top surface 41 of the insulating layer 4, the top surface312 of the die bonding region 31, and the top surface 322 of thering-shaped wiring region 32 is smaller than or equal to 1 μm, and aten-point mean roughness (Rz) of the top surface 41 of the insulatinglayer 4, the top surface 312 of the die bonding region 31, and the topsurface 322 of the ring-shaped wiring region 32 is smaller than or equalto 5 μm. Thus, the sidewall 313 of the die bonding region 31 is notexposed to air, so that the sidewall 313 of the die bonding region 31 isprevented from being oxidized and the degradation of light output due tothe residual etching agent is avoided. In the instant embodiment, thewidth of the insulating region 2 is about 75˜300 μm, and the height ofthe insulating region 2 is at least 18 μm.

The reflecting layer 5 covers the top surface 312 of the die bondingregion 31 and is extended to cover part of the top surface 41 of theinsulating layer 4 (i.e., the covering area of the reflecting layer 5 isgreater than the area of the top surface 312 of the die bonding region31), so that the die bonding region 31 is arranged inside a reflectingregion defined by orthogonally projecting the reflecting layer 5 ontothe substrate 1. The reflecting layer 5 has a flat surface 51 and acurved surface 52 surrounding the flat surface 51. The flat surface 51is located above the top surface 312 of the die bonding region 31 and issubstantially parallel to the top surface 312 of the die bonding region31, and the curved surface 52 is located above the insulating layer 4.When forming the reflecting layer 5, sagging phenomenon of the returningink is usually happened on the curved surface 52. Therefore, the flatsurface 51 of the reflecting layer 5 is still flat enough for mountingthe LED dies 200.

The detail relationships of the substrate 1, the metallic layer 3, theinsulating layer 4, and the reflecting layer 5 disclosed in the abovedescription are produced by an unique manufacturing method, and thefollowing description discloses the manufacturing method according tocross-sectional view. Moreover, the components in the followingdescription identical to the above description (i.e., the definition andthe material of the top surfaces 312, 322, 41 and the insulating region2) are not disclosed again. The manufacturing method includes the stepsas follows:

In step S110, as shown in FIG. 5A, the metallic layer 3 having the firstpattern is disposed on the substrate 1. Specifically, the first patternincludes the die bonding region 31 and the ring-shaped wiring region 32separated from the die bonding region 31, and the top surface 312 of thedie bonding region 31 and the top surface 322 of the ring-shaped wiringregion 32 are coplanar.

In step S130, as shown in FIG. 5B, the insulating layer 4 made ofinsulating material is formed on the substrate 1 by filling theinsulating material in the insulating region 2 (i.e., the insulatingregion 2 defined by the side wall 313 of the die bonding region 31, theside wall 323 of the ring-shaped wiring region 32, and the top surfaceof the substrate 1). Specifically, the top surface 41 of the insulatingmaterial protrudes from the top surface 312 of the die bonding region 31and the top surface 322 of the ring-shaped wiring region 32 so as tocover the adjacent top surfaces 312, 322, the side wall 313 of the diebonding region 31, and the side wall 323 of the ring-shaped wiringregion 32. Moreover, when the material of the insulating layer 4 issolder-resist ink, the insulating layer 4 is formed by photolithography;when the material of the insulating layer 4 is silicone or ceramic ink,the insulating layer 4 is formed by screen printing.

In step S150, as shown in FIG. 5C, a flattening process is implementedto polish the top surface 41 of the insulating layer 4, the top surface312 of the die bonding region 31, and the top surface 322 of thering-shaped wiring region 32, so that the top surface 41 of theinsulating layer 4, the top surface 312 of the die bonding region 31,and the top surface 322 of the ring-shaped wiring region 32 are flushedor coplanar. Accordingly, the arithmetical mean roughness (Ra) of thetop surface 41 of the insulating layer 4, the top surface 312 of the diebonding region 31, and the top surface 322 of the ring-shaped wiringregion 32 is smaller than or equal to 1 μm, and the ten-point meanroughness (Rz) of the top surface 41 of the insulating layer 4, the topsurface 312 of the die bonding region 31, and the top surface 322 of thering-shaped wiring region 32 is smaller than or equal to 5 μm. Thus, thecombination strength between the top surface 312 of the die bondingregion 31 and the bottom surface of the reflecting layer 5 can beeffectively increased by roughening the top surface of the die bondingregion 31 to become rougher after the polishing process.

In step S170, as shown in FIG. 4B, the reflecting layer 5 is formed onthe top surface 312 of the die bonding region 31 and covers part of thetop surface 41 of the insulating layer 4 by photolithography or thescreen printing, so that the die bonding region 31 is arranged in areflecting region defined by orthogonally projecting the reflectinglayer 5 onto the substrate 1. Thus, a portion of the top surface of thereflecting layer 5, which is arranged above the top surface 312 of thedie bonding region 31, is formed as the flat surface 51 and issubstantially parallel to the top surface 312 of the die bonding region31. A portion of the top surface of the reflecting layer 5, which isarranged above the insulating layer 4, is formed as the curved surface52 and surrounds the flat surface 51.

After implementing the steps S110 to S170, the LED carrier 100 is formedas shown in FIG. 4B. Optionally, each step can be replaced by analternative state. For example, please refer to FIG. 6, which shows analternative step S130′ and an alternative step S170′ respectivelyreplacing the step S130 and the step S170, or referring to FIG. 7, whichshows an alternative step S130″ and an alternative step S170″respectively replacing the step S130 and the step S170 while omittingthe step S150.

The following description discloses the different manufacturing featuresof the alternative states as shown in FIGS. 6 and 7 with respect to thesteps shown in FIG. 4B, and the structural features similar to themanufacturing features are not disclosed again.

Please refer to FIG. 6, which shows a first alternative state. In stepS130′, the top surface 41 of the insulating layer 4 is protruded fromthe top surface 312 of the die bonding region 31 and the top surface 322of the ring-shaped wiring region 32 during the forming process of theinsulating layer 4, so that the top surface 41 of the insulating layer 4covers the entire top surface 312 and the entire side wall 313 of thedie bonding region 31 (e.g., a gap exists between the insulating layer 4and the side wall 323 of the ring-shaped wiring region 32), thereby thedie bonding region 31 is embedded in the insulating layer 4. In otherwords, a projecting area of the insulating layer 4 defined byorthogonally projecting the insulating layer 4 onto the substrate 1 isgreater than a projecting area of the die bonding region 31 defined byorthogonally projecting the die bonding region 31 onto the substrate 1.A thickness of the insulating layer 4, which covers the top surface 312of the die bonding region 31, is 50% smaller than that of the diebonding region 31. In step S170′, the reflecting layer 5 covers most ofthe top surface 41 of the insulating layer 4 during the forming processof the reflecting layer 5, so that the die bonding region 31 is arrangedwithin the reflecting region defined by orthogonally projecting thereflecting layer 5 onto the substrate 1. In other words, a projectingarea of the reflecting layer 5 defined by orthogonally projecting thereflecting layer 5 onto the substrate 1 is greater than the projectingarea of the die bonding region 31 defined by orthogonally projecting thedie bonding region 31 onto the substrate 1 (e.g., the outer periphery ofthe insulating layer 4 arranged above the insulating region 2 is notcovered by the reflecting layer 5).

Please refer to FIG. 7, which shows a second alternative state. In stepS130″, the top surface 41 of the insulating layer 4 is lower than thetop surface 312 of the die bonding region 31 and the top surface 323 ofthe ring-shaped wiring region 32 during the forming process of theinsulating layer 4, so that a gap is formed between the insulating layer4 and the side wall 313 of the die bonding region 31 and a gap is formedbetween the insulating layer 4 and the side wall 323 of the ring-shapedwiring region 32. In step S170″, the reflecting layer 5 is formed on thetop surface 312 of the die bonding region 31, covers part of the topsurface 41 of the insulating layer 4, and is fully filled in the gapformed between the insulating layer 4 and the side wall 313 of the diebonding region 31 during the forming process of the reflecting layer 5,such that the die bonding region 31 is embedded in the reflecting layer5.

Notably, the above steps are disclosed based on cross-sectional view, sothat the instant disclosure can be carried out in another layout whensatisfying the above steps. That is to say, in top view of the LEDcarrier 100, the LED carrier 100 can be provided with different layouts.Moreover, the order of each step for the instant embodiment can bechanged in reasonable condition, in other words, the instant embodimentis not limited to the orders of the above steps.

The following description discloses the relationships of the LED dies200, the reflecting frame 300, the encapsulation body 400, and the LEDcarrier 100 shown in FIGS. 1A through 2A as an example (please alsorefer to FIGS. 4A and 4B).

After the step of mounting the LED dies 200 on the LED carrier 100, thereflecting frame 300 and the encapsulation body 400 are formed insequence on the LED carrier 100. Each of the LED dies 200 has a positivesoldering pad and a negative soldering pad (not shown), both are mountedon the flat surface 51 of the reflecting layer 5. The LED dies 200 areelectrically connected to the ring-shaped wiring region 32 of themetallic layer 3 (i.e., the positive electrode circuit 32P and thenegative electrode circuit 32N) via a plurality of wires (not shown) inseries. Specifically, since the flat surface 51 of the reflecting layer5 is higher than the ring-shaped wiring region 32 of the metallic layer3, the light emitted from the LED dies 200 disposed on the flat surface51 of the reflecting layer 5 is not shielded by the ring-shaped wiringregion 32 so as to prevent brightness loss, thus the LED packagestructure of the instant embodiment has preferably high brightness.

Moreover, the reflecting frame 300 is disposed on the LED carrier 100and surrounds the LED dies 200, and the encapsulation body 400 isarranged inside the reflecting frame 300 and covers the LED dies 200.The reflecting frame 300 can be disposed on the LED carrier 100 by adispensing manner or a molding manner in order to receive theencapsulation body 400. Specifically, the reflecting frame 300 is formedon the ring-shaped wiring portion 32 of the metallic layer 3, where thering-shaped wiring portion 32 is not covered by the solder-resist layer6. In other words, the outer edge of the reflecting frame 300 overlapsthe edge of the opening 61 of the solder-resist layer 6, the reflectingframe 300 covers the arc slots 321 except for the V-shaped notches 3211(as shown in FIG. 1B). The arrangement of the arc slots 321 increasesthe combination strength between the reflecting frame 300 and thesubstrate 1. The encapsulation body 400 is limited in a packaging regiondefined by the reflecting frame 300, such that the packaging region andthe amount of resin for the encapsulation body 400 can be effectivelycontrolled.

The reflecting frame 300 and the encapsulation body 400 can be made bysilicone resin or epoxy resin. For example, the reflecting frame 300 canbe a non-transparent frame for reflecting light emitted from the LEDdies 200, and the encapsulation body 400 can be a transparent body or afluorescent body having fluorescent powders, but the instant embodimentis not limited to the examples provided herein.

Specifically, when the reflecting frame 300 is disposed on the LEDcarrier 100 to surround the LED dies 200, the reflecting frame 300 isonly disposed on the connecting boundary of the solder-resist layer 6and the ring-shaped wiring region 32 of the metallic layer 3 (as shownin FIG. 1B). The contacting area between the reflecting frame 300 andthe ring-shaped wiring region 32 of the metallic layer 3 can beincreased by the slots 321 of the ring-shaped wiring region 32 beingexposed from the solder-resist layer 6, so that the combination strengthbetween reflecting frame 300 and the ring-shaped wiring region 32 isincreased. Thus, the instant embodiment can effectively avoid thereflecting frame 300 being peeled from the ring-shaped wiring region 32due to an external force. Moreover, the reflecting frame 300 does notentirely cover the ring-shaped wiring region 32. A portion of thering-shaped wiring region 32, which is not covered by the ring-shapedwiring region 32, is configured to be a wiring region for the wiringprocess of the LED dies 200.

Specifically, the ring-shaped wiring region 32 can be divided into aninner arc circuit 32 a and an outer arc circuit 32 b (as shown in FIG.1B) by forming the arc slots 321. The outer arc circuit 32 b is coveredby the reflecting frame 300, and the inner arc circuit 32 a is exposedfrom the reflecting frame 300 for providing the wiring process of theLED dies 200.

Besides, the LED package structure can be provided without thereflecting frame 300 (not shown), that is to say, the encapsulation body400 is directly formed on the LED carrier 100 to cover the LED dies 200,thereby directly encapsulating the LED dies 200.

Second Embodiment

Please refer to FIGS. 8 through 11B, which show a second embodiment ofthe LED package structure. The second embodiment is similar to the firstembodiment, but the reflecting layer 5 of the instant embodiment is alsoused as the solder-resist layer. The design principle of the LED carrier100 of the instant embodiment is similar to the first embodiment, butsome structural features of the instant embodiment are different fromthe first embodiment and discloses as follows.

As shown in FIGS. 9 and 10, the metallic layer 3 has a first pattern,and the first pattern includes a plurality of die bonding regions 31, aring-shaped wiring region 32, and a plurality of connectors 33. Each ofthe die bonding regions 31 has a first die bonding portion 316 and asecond die bonding portion 317 arranged apart from the first die bondingportion 316. An LED die 200, which is a flip-chip die, is disposed onthe first die bonding portion 316 and the second die bonding portion 317by a flip-chip manner. The ring-shaped wiring region 32 has a positiveelectrode circuit 32P and a negative electrode circuit 32N arrangedapart from the positive electrode circuit 32P. The die bonding regions31 and the connectors 33 are surrounded by the ring-shaped wiring region32. The connectors 33 connect the plurality of die bonding regions 31 tothe ring-shaped wiring region 32. Specifically, any one of the diebonding region 31 is arranged between two adjacent connectors 33, suchthat the die bonding regions 31 and the connectors 33 are arranged in acontinuous line in an alternative manner. The connectors 33 arranged attwo opposite ends are respectively connected to the two portions of thering-shaped wiring region 32 (i.e., the positive electrode circuit 32Pand the negative electrode circuit 32N). Moreover, the ring-shapedwiring region 32 of the instant embodiment is provided without any slot321.

Each of the die bonding regions is provided for mounting one LED die200, and the die bonding regions 31 are arranged substantially insidethe ring-shaped wiring region 32 in three concentric circles to providean LED package structure having uniformly light-emitting effect.

The metal layer 3 has a first pattern and the insulating layer 4 has asecond pattern, while the first pattern and the second pattern arecomplementary. Namely, the insulating layer 4 is disposed on aninsulating region of the substrate 1. The insulating region can bedefined by a region that is not covered by the metallic layer 3. Theedge of the insulating layer 4 substantially aligns the edge of thesubstrate 1. The top surface of the metallic layer 3 and the top surfaceof the insulating layer 4 are coplanar. Moreover, the reflecting layer 5covers the metallic layer 3 and the insulating layer 4. The reflectinglayer 5 has a plurality of openings 53, such that the die bondingregions 31 are exposed from the reflecting layer 5 via the openings 53.The edge of the reflecting layer 5 substantially is flushed against theedge of the substrate 1 and the edge of the insulating layer 4.

Additionally, in another embodiment (not shown), the reflecting layer 5can be only disposed inside the ring-shaped wiring region 32, the edgeof the reflecting layer 5 does not need to be aligned or flushed againstthe edge of the substrate 1 before disposing the solder-resist layer 6of the first embodiment on the reflecting layer 5. In other words, thereflecting layer 5 is disposed on the circular region that the LED dies200 are mounted thereon. Thus, the usage of the reflecting material canbe reduced for cost down by reducing the covering area of the reflectinglayer 5.

Specifically, please refer to FIGS. 11A and 11B. Each of the die bondingregions 31 has the first die bonding portion 316 and the second diebonding portion 317. The LED die 200, which is a flip-chip die, isdisposed across the first die bonding portion 316 and the second diebonding portion 317. The LED die 200 is also arranged across theinsulating region 2 between the first die bonding portion 316 and thesecond die bonding portion 317. A region between the side wall 313 ofthe die bonding regions 31 and the side wall 323 of the ring-shapedwiring region 32 is defined as the insulating region 2. A region betweenthe side walls 313 of the first die bonding portion 316 and the seconddie bonding portion 317 is also defined as the insulating region 2. Theinsulating layer 4 is filled in the insulating region 2 to cover theside wall 313 of the die bonding regions 31 and the side wall 323 of thering-shaped wiring region 32. Moreover, the top surface 41 of theinsulating layer 4, the top surface 312 of the die bonding regions 31,and the top surface 322 of the ring-shaped wiring region 3 aresubstantially coplanar. In other words, the metallic layer 3 has a firstpattern, the insulating layer 4 has a second pattern, the first patternand the second pattern are complementary, and the metallic layer 3 iscoplanar with the insulating layer 4, such that the insulating layer 4covers the side edge of the die bonding regions 31, the side edge of thering-shaped wiring region 32, and the side edge of each connectors 33.

Please refer to FIGS. 8, 9, 11A, and 11B. After mounting the LED dies200 on the LED carrier 100, the reflecting frame 300 and theencapsulation body 400 are sequentially disposed on the LED carrier 100to obtain an LED package structure. The LED dies 200 are respectivelymounted on the die bonding regions 31 via the openings 53 of thereflecting layer 5, so that the LED dies 200 are respectively andelectrically connected in series by the continuous lines defined by thedie bonding regions 31 and the connectors 33. It should be noted that,the reflecting frame 300 can be formed firstly, and then the LED dies200 is mounted. That is to say, the reflecting frame 300, the LED dies200, and the encapsulation body 400 can be disposed on the LED carrier100 in sequence.

Moreover, the reflecting frame 300 is disposed on the reflecting layer 5and surrounds the LED dies 200, and the encapsulation body 400 isarranged within the reflecting frame 300 and covers the LED dies 200.The reflecting frame 300 can be disposed on the LED carrier 100 by adispensing manner or a molding manner in order to receive theencapsulation body 400.

Additionally, the substrate 1 of the instant embodiment can be ametallic substrate or an insulating substrate. When the substrate 1 isthe metallic substrate, a dielectric layer (not shown) is disposedbetween the metallic substrate and the metallic layer 3, the dielectriclayer covers one surface of the metallic substrate, and the edge of thedielectric layer substantially aligns with or is flushed against theedge of the metallic substrate. The metallic substrate can be analuminum substrate or a copper substrate, but is not limited thereto.The insulating substrate can be a ceramic substrate or a resinsubstrate.

Third Embodiment

Please refer to FIGS. 12A and 12B, which show a state of a thirdembodiment of the LED package structure of the instant disclosure. TheLED package structure includes an LED carrier 100, a plurality of LEDdies 200, a reflecting frame 300, and an encapsulation body 400. The LEDcarrier 100 includes a substrate 1, a metallic layer 3, and aninsulating layer 4. The metallic layer 3 and the insulating layer 4 aredisposed on the substrate 1. The metallic layer 3 has a first pattern,the insulating layer 4 has a second pattern, and the first pattern andthe second pattern are complementary. The main difference between thestate of the third embodiment and the second embodiment is that theexclusion of the reflecting layer 5 in the LED carrier 100 of theinstant state. The substrate 1 of the LED carrier 100 is an insulatingsubstrate, such as a ceramic substrate or a resin substrate. In theinstant state of the third embodiment, the LED carrier 100 is providedwithout the solder-resist layer, such that the upper surface of the LEDpackage structure arranged outside the reflecting frame 300 is theinsulating layer 4.

Please refer to FIGS. 13A and 13B, which show another state of the LEDpackage structure in accordance with the third embodiment of the instantdisclosure. The LED package structure includes an LED carrier 100, aplurality of LED dies 200, a reflecting frame 300, and an encapsulationbody 400. The LED carrier 100 includes a substrate 1, a metallic layer3, an insulating layer 4, and a solder-resist layer 6. The metalliclayer 3 and the insulating layer 4 are disposed on the substrate 1. Themetallic layer 3 has a first pattern, the insulating layer 4 has asecond pattern, and the first pattern and the second pattern arecomplementary. The solder-resist layer 6 is disposed on the metalliclayer 3 and the insulating layer 4. The main difference between thestate of the third embodiment and the second embodiment is the exclusionof the reflecting layer 5 in the LED carrier 100 of the instant state.The substrate 1 of the LED carrier 100 is a metallic substrate, and adielectric layer is disposed between the metallic substrate and themetallic layer 3. The edge of the solder-resist layer 6 aligns with oris flushed against the edge of the insulating layer 4, and thesolder-resist layer 6 further has a circular opening 61 arranged on thecenter thereof and two triangular openings 63 arranged outside theopening 61. The edge of the opening 61 substantially aligns with theedge of the ring-shaped wiring region 32, the die bonding regions 31 andthe connectors 33 are arranged in the opening 61, and the ring-shapedwiring region 32 is covered by the solder-resist layer 6. The positionsof the two openings 63 respectively correspond to the soldering pads 324of the ring-shaped wiring region 32, such that the soldering pads 324are exposed from the solder-resist layer 6 via the openings 63 toestablish connections to an external power.

Fourth Embodiment

Please refer to FIGS. 14 through 17B, which show a fourth embodiment ofthe instant disclosure. The design principle of the LED carrier 100 ofthe instant embodiment is similar to the second embodiment, and theconstruction of the LED package structure of the instant embodiment issubstantially disclosed as follows.

As shown in FIGS. 14 and 15, the LED package structure of the instantembodiment includes an LED carrier 100, a plurality of LED dies 200mounted on the LED carrier 100, and an encapsulation body 400 formed onthe LED carrier 100. The LED dies 200 are flip-chip dies, thus the LEDdies 200 can be mounted on the LED carrier 100 directly without any goldwires. The encapsulation body 400 may be epoxy resin or silicon resinand may further include a fluorescent material mixed therein, therebychanging the color of light emitted from the LED package structure. Whenthe fluorescent material is not mixed with the encapsulation body 400,the fluorescent material can be selectively coated on the LED dies 200to change the color of light emitted from the LED dies 200. Thefollowing description discloses the LED carrier 100, and then disclosesthe relationship between the LED carrier 100 and the other components.

Please refer to FIG. 16. The LED carrier 100 includes a substrate 1, ametallic layer 3, an insulating layer 4, a reflecting layer 5, threesoldering pads 7, and two conductive pillars 8. The substrate 1 of theinstant embodiment is the insulating substrate, such as a ceramicsubstrate or a resin substrate.

The metallic layer 3 (e.g., copper foil) and the soldering pads 7 arerespectively disposed on two opposite surfaces of the substrate 1 (i.e.,the top surface and the bottom surface of the substrate 1 as shown inFIG. 16). The metallic layer 3 has a first pattern, and the firstpattern has a plurality of blocks. For the purpose of that the LED dies200 are connected in series, the blocks of the first pattern arestaggered and spaced apart to define four die bonding areas 34 (as shownin FIG. 16). Two of the plurality of blocks, which are arranged at twoends of the series, are respectively used as a positive electrode and anegative electrode.

The substrate 1 further has at least two thru-holes. The two thru-holes11 of the substrate 1 are provided for filling the conductive pillars 8therein, so that the two conductive pillars 8 respectively connect thepositive electrode and the negative electrode to the soldering pads 7(i.e., the left side soldering pad 7 and the right side soldering pad 7as shown in FIG. 16). The soldering pad 7 arranged on the center of thesubstrate 1 is used for dissipating heat. Thus, the electrical path andthe heat dissipation path can be separated by those three soldering pads7.

The insulating layer 4 is disposed on an insulating portion of thesubstrate 1 not covered by the metallic layer 3, a carrying region ofthe substrate 1 provided for carrying the metallic layer 3 and acarrying region of the substrate 1 provided for carrying the insulatinglayer 4 are complementary, and the edge of the insulating layer 4substantially aligns with or is flushed against the edge of thesubstrate 1. In other words, the metallic layer 3 has a first pattern,the insulating layer 4 has a second pattern, and the first pattern andthe second pattern are complementary. The metallic layer 3 and theinsulating layer 4 are coplanar.

Moreover, the reflecting layer 5 covers the metallic layer 3 and theinsulating layer 4 and has four openings 53, and the four die bondingareas 34 are exposed from the reflecting layer 5 respectively via thefour openings 53. The edge of the reflecting layer 5 substantiallyaligns with or is flushed against the edge of the insulating layer 4.The light performance of the LED package structure can be increased bydisposing the reflecting layer 5 around the LED dies 200.

Particularly, as shown in FIGS. 17A and 17B, a region arranged betweentwo side walls of the two adjacent blocks of the metallic layer 3 isdefined as the insulating region 2. The insulating layer 4 is filled inthe insulating region 2 and covers the side walls of the two adjacentblocks of the metallic layer 3, and the top surface 41 of the insulatinglayer 4 and the top surface of the metallic layer 3 are coplanar. Byadapting the flip-chip die, the flip-chip die is arranged across theinsulating region 2 to dispose on the metallic layer 3. However, sincethe electrodes of the flip-chip die are arranged very close to oneanother, the positive electrode and the negative electrode of themetallic layer 3 are also closely arranged, which easily renders the LEDpackage structure unreliable. The instant embodiment sets the insulatinglayer 4 in the insulating region 2 to ensure that the positive electrodeand the negative electrode of the metallic layer 3 are separated with adistance, thereby increasing the reliability of the LED packagestructure.

As shown in FIGS. 14, 15, 17A, and 17B, the reflecting layer 5 surroundsthe die bonding areas 34 while covering the metallic layer 3 and theinsulating layer 4. That is to say, the reflecting layer 5 is notarranged under the LED dies 200, the reflecting layer 5 is disposed onthe metallic layer 3 and the insulating layer 4, and reflecting layer 5surrounds the LED dies 200.

Please refer to FIGS. 15 and 16. The LED dies 200 are bonded on the LEDcarrier 100, and the encapsulation body 400 is formed on the LED carrier100, thereby forming the LED package structure. The edge of theencapsulation body 400 substantially aligns with the edge of thereflecting layer 5, and the center portion of the encapsulation body 400is substantially constructed as a hemisphere lens. Each of the LED dies200 is fixed on the respective die bonding area 31 of the metallic layer3 and across the insulating region 2 by passing through the respectiveopening 53 of the reflecting layer 5, thereby the LED dies 200 can beelectrically connected in a series manner with high reliability.

As shown in FIG. 16, one of the two outer blocks of the metallic layer 3has a tail 35, and the tail 35 extends around the negative block toenter the another outer block, thereby the LED dies 200 can be conductedin series. That is to say, the four LED dies 200 are electricallyconnected in series. Moreover, the negative block surrounded by the tail35 has two straight slits 325, and each of the two outer blocks has ahollow right angle slit 325 arranged on the left portion thereof asshown in FIG. 16. The two straight slits 325 and the two right angleslits 325 are provided for the locations of the LED dies 200.

Fifth Embodiment

Please refer to FIG. 18, which shows a fifth embodiment of the LEDpackage structure of the instant disclosure. The LED package structureincludes an LED carrier 100, a plurality of LED dies 200, and anencapsulation body 400. The design principle of the LED carrier 100 ofthe instant embodiment is similar to the fourth embodiment. The LEDcarrier 100 of the instant embodiment includes a substrate 1, a metalliclayer 3, and an insulating layer 4. The metallic layer 3 and theinsulating layer 4 are disposed on the substrate 1. The metallic layer 3has a first pattern, the insulating layer 4 has a second pattern, andthe first pattern and the second pattern are complementary. Thedifference between the instant embodiment and the fourth embodiment isdisclosed as follows. The LED carrier 100 is provided without thereflecting layer 5 of the fourth embodiment. Each LED die 200 isdirectly fixed on the respective die bonding area 34 of the metalliclayer 3. The encapsulation body 400 having lens construction is directlyformed on the LED carrier 100, and the edge of the encapsulation body400 aligns with the edge of the LED carrier 100.

[The Possible Effect of the Instant Disclosure]

In summary, the LED package structure of the first embodiment of theinstant disclosure is provided with the insulating layer and thereflecting layer of the LED carrier and formed by two steps, such thatwhen forming the reflecting layer, the sagging phenomenon of returningink remain is usually happened on the curved surface of the insulatinglayer so that the die bonding areas is enough to optimize the distancebetween each of the LED dies. The LED package structure of the instantdisclosure can effectively provide high lighting performance.

When the insulating layer (or the reflecting layer) is formed andentirely covers the side wall of the die bonding region, the side wallof the die bonding region is not exposed to air and the side wall of thedie bonding region is prevented from being oxidized. Therefore, thedegradation of light output generated from the residual etching agent isavoided. Moreover, the combination strength between the top surface ofthe metallic layer and the bottom surface of the reflecting layer can beeffectively increased by roughening the top surface of the metalliclayer.

Additionally, the LED package structure according to the second to thefifth embodiments of the instant disclosure can prevent ions frommigrating. The ions migration is usually happened due to the distancebetween the first die bonding portion and the second die bonding portiontoo short. By means of the metallic layer and the insulating layer arecoplanar and the first pattern and the second pattern are complementary,the reliability of the LED package structure is enhanced.

The descriptions illustrated supra set forth simply the preferredembodiments of the instant disclosure; however, the characteristics ofthe instant disclosure are by no means restricted thereto. All changes,alternations, or modifications conveniently considered by those skilledin the art are deemed to be encompassed within the scope of the instantdisclosure delineated by the following claims.

What is claimed is:
 1. An LED carrier for mounting at least one LED die,comprising: a substrate; a metallic layer disposed on the substrate andhaving a die bonding region and a ring-shaped wiring region, thering-shaped wiring region arranged around the die bonding region andspaced apart from the die bonding region, a ring-shaped groove formedbetween the die bonding region and the ring-shaped wiring region; aninsulating layer at least partially disposed in the ring-shaped groove;and a reflecting layer disposed above the die bonding region and atleast partially covering the ring-shaped groove, wherein the at leastone LED die is disposed on the reflecting layer and arranged in the diebonding region, and the at least one LED die is electrically connectedto the ring-shaped wiring region.
 2. The LED carrier as claimed in claim1, wherein a top surface of the insulating layer, a top surface of thedie bonding region, and a top surface of the ring-shaped wiring regionare substantially coplanar.
 3. The LED carrier as claimed in claim 2,wherein an arithmetical mean roughness (Ra) of the top surface of thedie bonding region and the top surface of the insulating layer issmaller than or equal to 1 μm.
 4. The LED carrier as claimed in claim 1,wherein the insulating layer covers the die bonding region, a projectingarea of the insulating layer defined by projecting the insulating layeronto the substrate is greater than a projecting area of the die bondingregion defined by projecting he die bonding region onto the substrate, aprojecting area of the reflecting layer defined by projecting thereflecting layer onto the substrate is greater than the projecting areaof the die bonding region defined by projecting the die bonding regiononto the substrate.
 5. The LED carrier as claimed in claim 1, wherein atop surface of the insulating layer is relatively lower than a topsurface of the die bonding region and a top surface of the ring-shapedwiring region with respect to the substrate, a gap is formed between aside wall of the insulating layer and a side wall of the die bondingregion, and the reflecting layer covers the top surface of the diebonding region and partially fills in the gap.
 6. An LED carrier formounting at least one LED die, comprising: a substrate; a metallic layerhaving a first pattern and disposed on the substrate; and an insulatinglayer having a second pattern and disposed on the substrate, wherein thefirst pattern and the second pattern are complementary, such that acarrying region of the substrate for carrying the metallic layer and acarrying region of the substrate for carrying the insulating layer arecomplementary.
 7. The LED carrier as claimed in claim 6, wherein a topsurface of the metallic layer and a top surface of the insulating layerare coplanar.
 8. The LED carrier as claimed in claim 6, the firstpattern comprising a die bonding region arranged on a center of thesubstrate for mounting the at least one LED die; and a ring-shapedwiring region having a positive electrode circuit and a negativeelectrode circuit, the positive electrode circuit and the negativeelectrode circuit arranged to surround the die bonding region and spacedapart from each other, wherein the at least one LED die is disposed onthe die bonding region and electrically connected to the positiveelectrode circuit and the negative electrode circuit.
 9. The LED carrieras claimed in claim 8, the first pattern further comprising atemperature sensing portion being provided for sensing temperature ofthe die bonding region that the at least one LED die is mounted thereon;and an extending portion disposed between the positive electrode circuitand the negative electrode circuit, wherein the extending portionconnects the die bonding region to the temperature sensing portion. 10.The LED carrier as claimed in claim 8, wherein one of the positiveelectrode circuit and the negative electrode circuit has at least oneslot thereon, the slot is substantially arranged around the die bondingregion to resemble an arc-shaped slot.
 11. The LED carrier as claimed inclaim 10, wherein the at least one slot has a V-shaped notch, and anopening of the V-shaped notch faces away from the die bonding region.12. The LED carrier as claimed in claim 8, wherein the positiveelectrode circuit has a first slot and a second slot, the negativeelectrode circuit has a third slot and a fourth slot, the first slot hasa first V-shaped notch, the second slot has a second V-shaped notch, thethird slot has a third V-shaped notch, the fourth slot has a fourthV-shaped notch, the first, second, third, and fourth V-shaped notchesare respectively arranged at four quadrants.
 13. The LED carrier asclaimed in claim 8, further comprising: a reflecting layer disposed onthe die bonding region and partially covering the second pattern of theinsulating layer, wherein the at least one LED die is mounted on thereflecting layer.
 14. The LED carrier as claimed in claim 13, whereinthe reflecting layer is made of solder-resist ink, silicone, or ceramicink, and the reflecting layer has a reflectivity of at least 80% forlight having a wavelength of 400˜470 nm.
 15. The LED carrier as claimedin claim 6, wherein the insulating layer is made of solder-resist ink,silicone, ceramic ink, or thermosetting resin.
 16. The LED carrier asclaimed in claim 13, wherein an outer surface of the reflecting layerdefines a flat surface and a curved surface surrounding the flatsurface, the flat surface is at least partially located above the topsurface of the die bonding region and is substantially parallel to thetop surface of the die bonding region, the curved surface is locatedabove the insulating layer.
 17. The LED carrier as claimed in claim 13,wherein the die bonding region is arranged inside a reflecting regiondefined by projecting the reflecting layer onto the substrate.
 18. TheLED carrier as claimed in claim 6, the first pattern comprising: aplurality of die bonding regions provided for mounting a plurality ofLED dies thereon, each of the plurality of die bonding regions having afirst die bonding portion and a second die bonding portion spaced apartfrom the first die bonding portion; a ring-shaped wiring region having apositive electrode circuit and a negative electrode circuit spaced apartfrom the positive electrode circuit, wherein the ring-shaped wiringregion substantially surrounds the plurality of die bonding regions; anda plurality of connectors connecting the plurality of die bondingregions to the ring-shaped wiring region.
 19. The LED carrier as claimedin claim 18, wherein the plurality of die bonding regions are arrangedsubstantially inside the ring-shaped wiring region in three concentriccircles.
 20. The LED carrier as claimed in claim 18, further comprising:a reflecting layer disposed on the metallic layer and the insulatinglayer, wherein the reflecting layer has a plurality of openings inposition corresponding to the plurality of die bonding regions.
 21. TheLED carrier as claimed in claim 18, further comprising: a plurality ofLED dies respectively disposed on the plurality of die bonding regionsin a flip-chip manner, wherein each of the plurality of LED diesconnects to the first die bonding portion and the second die bondingportion.
 22. A manufacturing method of an LED carrier, comprising:providing a substrate; forming a metallic layer having a first patternon the substrate; and forming an insulating layer having a secondpattern on the substrate, wherein the second pattern is complementary tothe first pattern.
 23. The manufacturing method of the LED carrier asclaimed in claim 22, further comprising: forming the insulating layermade of an insulating material on the substrate by photolithography orscreen printing, wherein a height of the insulating layer is greaterthan that of the metallic layer; and polishing the insulating layer toalign the height of the insulating layer substantially identical to thatof the metallic layer, thereby the second pattern of the insulatinglayer is formed on the substrate.
 24. The manufacturing method of theLED carrier as claimed in claim 22, further comprising: forming areflecting layer on at least one of the first pattern and the secondpattern by photolithography or screen printing.
 25. The manufacturingmethod of the LED carrier as claimed in claim 24, further comprising:roughening at least one of the metallic layer having the first patternand the insulating layer having the second pattern to dispose thereflecting layer, wherein an arithmetical mean roughness (Ra) of a topsurface of the metallic layer and a top surface of the insulating layeris smaller than or equal to 1 μm.